MMDT4401 Datasheet, PDF (1/2 Pages) Transys Electronics – DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Plastic-Encapsulate Transistors
FEATURES
Epitaxial Planar Die Construction
Ideal for Low Power Amplification and Switching
MMDT4401(NPN)
MARKING: K2X
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
V_CBO
60
V
Collector-Emitter Voltage
V_CEO
40
V
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
V_EBO
I_C
I_C
T_J
Tstg
6
V
600
mA
200
mW
150
-55 to +150
C₂
B₁
E₁
E₂
B₂
C₁
SOT-363
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output Capacitance
Delay time
Rise time
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
Cob
td
tr
Test conditions
IC= 100 μA, IE=0
IC= 1mA, IB=0
IE= 100 μA, IC=0
VCB= 50 V , IE=0
VCE= 35 V , IB=0
VEB= 5V , IC=0
VCE= 1V, IC= 0.1mA
VCE= 1V, IC= 1mA
VCE= 1V, IC= 10mA
VCE= 1V, IC= 150mA
VCE= 2V, IC= 500mA
IC=150 mA, IB= 15mA
IC=500 mA, IB= 50mA
IC= 150 mA, IB= 15mA
IC= 500 mA, IB= 50mA
VCE= 10V,IC= 20mA,f=100MHz
VCB=5V, IE= 0,f=1MHz
VCC=30V,
VBE=2V,IC=150mA ,IB1=15mA
Storage time
Fall time
tS
VCC=30V, IC=150mA,IB1=-IB2=15mA
tf
Min Max
60
40
6
0.1
0.5
0.1
20
40
80
100 300
40
0.4
0.75
0.75 0.95
1.2
250
6.5
15
20
225
30
Unit
V
V
V
μA
μA
μA
V
V
V
V
MHz
pF
nS
nS
nS
nS
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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