MMDT3906 Datasheet, PDF (1/2 Pages) Transys Electronics – DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Plastic-Encapsulate Transistors
FEATURES
Epitaxial planar die construction
Ideal for low power amplification and switching
MARKING: K3N
MAXIMUM RATINGS (TA=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
V_CBO
-40
V_CEO
-40
V_EBO
-5
I_C
-200
I_C
200
T_J
150
Tstg
-55 to +150
Unit
V
V
V
mA
mW
MMDT3906(PNP)
C₂
B₁
E₁
E₂
B₂
C₁
SOT-363
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Base cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Delay time
Rise time
Storage time
Fall time
Symbol
Test conditions
V(BR)CBO IC=-10μA,IE=0
V(BR)CEO IC=-1mA,IB=0
V(BR)EBO
ICEX
IE=-10μA,IC=0
VCE=-30V,VEB(OFF)=-3V
IEBO VEB=-5V,IC=0
hFE(1) VCE=-1V,IC=-0.1mA
hFE(2) VCE=-1V,IC=-1mA
hFE(3) VCE=-1V,IC=-10mA
hFE(4) VCE=-1V,IC=-50mA
hFE(5) VCE=-1V,IC=-100mA
VCE(sat)1 IC=-10mA,IB=-1mA
VCE(sat)2 IC=-50mA,IB=-5mA
VBE(sat)1
VBE(sat)2
IC=-10mA,IB=-1mA
IC=-50mA,IB=-5mA
fT
VCE=-20V,IC=-10mA,f=100MHz
Cob VCB=-5V,IE=0,f=1MHz
NF VCE=-5V,Ic=-0.1mA,f=1kHz,Rg=1KΩ
td
VCC=-3V, VBE=0.5V
tr
IC=-10mA , IB1=-IB2=-1mA
tS
VCC=-3V,
tf
IC=-10mA
IB1=-IB2=- 1mA
Min Typ Max Unit
-40
V
-40
V
-5
V
-50 nA
-50 nA
60
80
100
300
60
30
-0.25 V
-0.4
V
-0.65
-0.85 V
-0.95 V
250
MHz
4.5
pF
4
dB
35
nS
35
nS
225
nS
75
nS
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
Page:P2-P1