MMDT3904 Datasheet, PDF (1/2 Pages) Transys Electronics – DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Plastic-Encapsulate Transistors
FEATURES
Epitaxial planar die construction
Ideal for low power amplification and switching
MARKING: K6N
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
Collector-Emitter Voltage
V_CBO
V_CEO
60
V
40
V
Emitter-Base Voltage
V_EBO
5
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
I_C
200
mA
I_C
200
mW
T_J
150
Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Delay time
Rise time
Storage time
Fall time
Symbol
VCBO
VCEO
VEBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
Cob
NF
t_d
t_r
t_S
t_f
Test conditions
IC=10μA,IE=0
IC=1mA,IB=0
IE=10μA,IC=0
VCB=30V,IE=0
VEB=5V,IC=0
VCE=1V,IC=0.1mA
VCE=1V,IC=1mA
VCE=1V,IC=10mA
VCE=1V,IC=50mA
VCE=1V,IC=100mA
IC=10mA,IB=1mA
IC=50mA,IB=5mA
IC=10mA,IB=1mA
IC=50mA,IB=5mA
VCE=20V,IC=10mA,f=100MHz
VCB=5V,IE=0,f=1MHz
VCE=5V,Ic=0.1mA,f=1kHz,RS=1KΩ
VCC=3V, VBE(off)=-0.5V
IC=10mA , IB1=-IB2= 1mA
VCC=3V, IC=10mA
IB1=-IB2=1mA
MMDT3904(NPN)
C₂
B₁
E₁
E₂
B₂
C₁
SOT-363
Min Typ Max Unit
60
V
40
V
5
V
0.05 μA
0.05 μA
40
70
100
300
60
30
0.2
V
0.3
V
0.65
0.85
V
0.95
V
300
MHz
4
pF
5
dB
35
nS
35
nS
200
nS
50
nS
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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