MMDT2907A Datasheet, PDF (1/2 Pages) Diodes Incorporated – DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Plastic-Encapsulate Transistors
FEATURES
Complementary PNP Type available MMDT29222A
MMDT2907A(PNP)
MARKING: K2F
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
V_CBO
-60
V
Collector-Emitter Voltage
V_CEO
-60
V
Emitter-Base Voltage
V_EBO
-5
V
Collector Current -Continuous
I_C
Collector Power Dissipation
I_C
Junction Temperature
T_J
-600
mA
200
mW
150
Storage Temperature
Tstg
-55 to +150
C₂
B₁
E₁
E₂
B₂
C₁
SOT-363
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output Capacitance
Input Capacitance
Delay time
Rise time
Storage time
Fall time
Symbol
VCBO
VCEO
VEBO
ICBO
ICEX
IEBO
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
C_ob
C_ib
t_d
t_r
t_S
t_f
Test conditions
IC= -10μA, IE=0
IC= -10mA, IB=0
IE=-10μA, IC=0
VCB=-50V, IE=0
VCE=-30V,VEB(Off)=-0.5V
VEB=-5V, IC=0
VCE=-10V, IC= -0.1mA
VCE=-10V, IC= -1mA
VCE=-10V, IC=-10mA
VCE=-10V, IC= -150mA
VCE=-10V, IC=-500mA
IC=-150mA, IB=-15mA
IC=-500mA, IB=- 50mA
IC=-150mA, IB=-15mA
IC=-500mA, IB= -50mA
VCE=-20V, IC= -50mA,f=100MHz
VCB=-10V, IE= 0,f=1MHz
VEB=-2V, IC= 0,f=1MHz
VCC=-30V,IC=-150mA, IB1=-15mA
VCC=-6V, IC=-150mA,
IB1= IB2= -15mA
Min Max Unit
-60
V
-60
V
-5
V
-10
nA
-50
nA
-10
nA
75
100
100
100
300
50
-0.4
V
-1.6
V
-1.3
V
-2.6
V
200
MHz
8
pF
30
pF
10
nS
40
nS
225
nS
60
nS
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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