MMBTA92 Datasheet, PDF (1/2 Pages) NXP Semiconductors – PNP high-voltage transistor

Plastic-Encapsulate Transistors
FEATURES
High voltage transistor
MMBTA92 ^(PNP)
MARKING: 2D
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Parameter
Symbol
Value
Collector-Base Voltage
V_CBO
300
Collector-Emitter Voltage
V_CEO
300
Emitter-Base Voltage
V_EBO
5
Collector Current -Continuous
I_C
500
Collector Power Dissipation
PC
0.3
Junction Temperature
T_J
150
Storage Temperature
Tstg
-55 to +150
Thermal Resistance, junction to Ambient
RÓ¨JA
410
Unit
V
V
V
mA
W
℃/mW
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCBO IC= -100μA, IE=0
VCEO IC= -1mA, IB=0
VEBO IE= -100μA, IC=0
ICB
IEOB
hFOE(1)
VCB=-200V, IE=0
VEB= -5V, IC=0
VCE= -10V, IC= -1mA
hFE(2) VCE= -10V, IC=-10mA
hFE(3) VCE= -10V, IC=-30mA
VCE(sat) IC=-20mA, IB= -2mA
VBE(sat)
fT
IC= -20mA, IB= -2mA
VCE=-20V, IC= -10mA
f=30MHz
Min
Max
Unit
-300
V
-300
V
-5
V
-0.25
μA
-0.1
μA
60
100
200
60
-0.2
V
-0.9
V
50
MHz
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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