MMBTA56 Datasheet, PDF (1/2 Pages) Samsung semiconductor – PNP (DRIVER TRANSISTOR)

Plastic-Encapsulate Transistors
FEATURES
Epitaxial planar die construction.
Complementary NPN types available
Marking:2GM
MAXIMUM RATINGS (TA=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
V_CBO
-80
V_CEO
-80
V_EBO
-4
I_C
500
PC
300
T_J
150
Tstg
-55 to +150
Unit
V
V
V
mA
mW
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
arameter
Symbol
Test conditions
ollector-base breakdown voltage
VCBO IC=-100μA,IE=0
Collector-emitter breakdown voltage
VCEO IC=-1.0mA,IB=0
Emitter-base breakdown voltage
collector cut-off current
VEBO
ICBO
IE=-100μA,IC=0
IE = 0; VCB = -80V
collector cut-off current
ICEO IB= 0; VCB = -80V
DC current gain
collector-emitter saturation voltage
hFE
VCE(sat)
VCE = -1V;IC = -10mA
VCE = -1V;IC = -100mA
IC = -100mA; IB = -10mA
base-emitter saturation voltage
VBE(sat) IC = -100mA; VCE = -1.0V
Transition frequency
fT
IC = -100mA; VCE = -1V;
f = 100MHz
MMBTA56 ^(PNP)
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
Min
Max
Unit
-80
V
-80
V
-4
V
-0.1
μA
-0.1
μA
100
-
100
-
-0.25
V
-1.2
V
50
MHz
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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