MMBTA05 Datasheet, PDF (1/2 Pages) Transys Electronics – NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Plastic-Encapsulate Transistors
FEATURES
· Epitaxial Planar Die Construction
· Complementary PNP Types Available
(MMBTA55 / MMBTA56)
· Ideal for Medium Power Amplification and
Switching
MMBTA05
MMBTA06
(NPN)
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Symbol
V_CBO
VCEO
VEBO
IC
Pd
R_qJA
T_j, T_STG
MMBTA05
MMBTA06
60
80
60
80
4.0
500
350
357
-55 to +150
Unit
V
V
V
mA
mW
K/W
°C
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Symbol
Min
MMBTA05
MMBTA06
V_(BR)CBO
60
80
MMBTA05
MMBTA06
V(BR)CEO
60
80
V_(BR)EBO
4.0
MMBTA05
MMBTA06
I_CBO
¾
MMBTA05
MMBTA06
ICES
¾
h_FE
VCE(SAT)
V_BE(SAT)
100
¾
¾
f_T
100
Note:
1. Valid provided that terminals are kept at ambient temperature.
2. Pulse test: Pulse width £ 300ms, duty cycle £ 2%.
Max
¾
¾
¾
100
100
¾
0.25
1.2
¾
Unit
Test Condition
V
IC = 100mA, IE = 0
V
I_C = 1.0mA, I_B = 0
V
I_E = 100mA, I_C = 0
nA
VCB = 60V, IE = 0
V_CB = 80V, I_E = 0
nA
VCE = 60V, IBO = 0V
V_CE = 80V, I_BO = 0V
¾
IC = 10mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V
V
I_C = 100mA, I_B = 10mA
V
I_C = 100mA, V_CE = 1.0V
MHz
V_CE = 2.0V, I_C = 10mA,
f = 100MHz
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
Page:P2-P1