MMBT5551 Datasheet, PDF (1/2 Pages) Transys Electronics – NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Plastic-Encapsulate Transistors
FEATURES
Complementary to MMBT5401
Ideal for medium power amplification and switching
MMBT5551 ^(NPN)
MARKING: G1
MAXIMUM RATINGS (TA=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
V_CBO
180
V_CEO
160
V_EBO
6
I_C
0.6
PC
0.3
T_J
150
Tstg
-55 to +150
Unit
V
V
V
A
W
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Symbol Test conditions
VCBO IC=100μA,IE=0
VCEO IC= 1mA, IB=0
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Input capacitance
Noise figure
*Pulse test
VEBO IE= 10μA, IC=0
ICBO VCB= 120V, IE=0
IEB VEB= 4V, IC=0
hFOE1* VCE=5V, IC=1mA
hFE2* VCE=5V, IC =10mA
hFE3* VCE=5V, IC=50mA
IC=10mA, IB=1mA
VCEsat*
IC=50mA, IB=5mA
IC=10mA, IB= 1mA
VBEsat*
IC=50mA, IB= 5mA
fT
VCE=10V,IC=10mA,f=100MHz
Cob VCB=10V,IE=0,f=1MHz
Cib VBE=0.5V,IC=0,f=1MHz
VCE=5V,Ic=0.25mA,
NF
f=10Hz to 15.7KHz,Rs=1kΩ
Min Typ Max Unit
180
V
160
V
6
V
50 nA
50 nA
80
100
300
50
0.15
V
0.2
1
V
1
100
300 MHz
6 pF
20 pF
8 dB
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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