MMBT4403 Datasheet, PDF (1/2 Pages) Transys Electronics – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Plastic-Encapsulate Transistors
FEATURES
Switching transistor)
MMBT4403 ^(PNP)
Marking:2T
MAXIMUM RATINGS (TA=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
V_CBO
-40
V_CEO
-40
V_EBO
-5
I_C
600
PC
300
T_J
150
Tstg
-55 to +150
Unit
V
V
V
mA
mW
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
VCBO
IC=-100μA , IE=0
Collector-emitter breakdown voltage
VCEO IC= -1mA , IB=0
Emitter-base breakdown voltage
VEBO IE=-100μA, IC=0
Collector cut-off current
ICBO VCB=-35V, IE=0
Collector cut-off current
ICEO VCE=-35 V, IB=0
Emitter cut-off current
IEBO VEB=-4V,IC=0
Min Max Unit
-40
V
-40
V
-5
V
-0.1 μA
-0.1 μA
-0.1 μA
DC current gain
hFE VCE=-2V, IC= -150mA
100
300
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCE(sat) IC=-150mA, IB=-15mA
-0.4
V
VBE(sat) IC=- 150mA, IB=-15mA
-0.95
V
VCE= -10V, IC= -20mA
fT
200
f = 100MHz
MHz
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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