MMBT3904 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN switching transistor

Plastic-Encapsulate Transistors
FEATURES
As complementary type the PNP transistor MMBT3906 is recommended
Epitaxial planar die construction
MARKING: 1AM
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Parameter
Symbol
Value
Collector-Base Voltage
V_CBO
60
Collector-Emitter Voltage
V_CEO
40
Emitter-Base Voltage
V_EBO
6
Collector Current -Continuous
I_C
Collector Power Dissipation
I_C
Thermal Resistance Junction to Ambient R_θJA
Junction Temperature
T_J
Storage Temperature
Tstg
200
200
625
150
-55 to +150
Unit
V
V
V
mA
mW
/W
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
V_CBO
V_CEO
V_EBO
I_CBO
I_CEX
I_EBO
h_FE(1)
I_C= 10μA, IE=0
IC= 1mA, IB=0
IE=10μA, IC=0
VCB=60V, IE=0
VCE=30V,VBE(off)=3V
VEB=5V, IC=0
VCE=1V, IC=10mA
DC current gain
h_FE(2)
VCE=1V, IC= 100mA
Collector-emitter saturation voltage
V_CE(sat)
IC=50mA, IB= 5mA
Base-emitter saturation voltage
Transition frequency
V_BE(sat)
f_T
IC= 50mA, IB= 5mA
VCE=20V, IC=10mA,f=100MHz
Delay Time
td
VCC=3V,VBE=-0.5V
Rise Time
tr
IC=10mA, IB1=-IB2=1.0mA
Storage Time
ts
VCC=3V,IC=10mA,
Fall Time
tf
IB1=-IB2=1mA
CLASSIFICATION OF
Rank
Range
O
120-200
Y
200-300
MMBT3904 ^(NPN)
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
Min
Max
Unit
60
v
40
v
6
v
0.1
uA
50
uA
0.1
uA
100
400
30
0.3
v
0.95
v
300
MHZ
35
nS
35
nS
200
nS
50
nS
G
300-400
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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