MMBT2907 Datasheet, PDF (1/2 Pages) Samsung semiconductor – PNP (GENERAL PURPOSE TRANSISTOR)

Plastic-Encapsulate Transistors
FEATURES
Epitaxial planar die construction.
Ideal for medium power amplification and switching.
MMBT2907 (PNP)
Marking:M2B
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Parameter
Symbol
Value
Collector-Base Voltage
V_CBO
-60
Collector-Emitter Voltage
V_CEO
-40
Emitter-Base Voltage
V_EBO
-5
Collector Current -Continuous
Collector Power Dissipation
I_C
-600
PC
350
Thermal Resistance Junction to Ambient
RθJA
360
Junction Temperature
T_J
150
Storage Temperature
Tstg
-55 to +150
Unit
V
V
V
mA
mW
℃/W
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
VCBO
VCEO
IC=-10μA IE=0
IC=-10mA IB=0
Emitter-base breakdown voltage
VEBO
IE=-10μA IC=0
Collector cut-off current
ICBO
VCB=-50V IE=0
Collector cut-off current
ICEX
VCE=-30V VBE(OFF)=-0.5V
DC current gain
VCE=-10V IC=-150mA
VCE=-10V IC=-0.1Ma
hFE
VCE=-10V IC=-1mA
VCE=-10V IC=-10mA
VCE=-10V IC=-500mA
Collector-emitter saturation voltage
Base-emitter saturation voltage
Output capacitance
Input capacitance
Transition frequency
VCE(sat)
VBE(sat)
Cob
Cib
fT
IC=-150mA IB=-15mA
IC=-500mA IB=-50mA
IC=-150mA IB=-15mA
IC=-500mA IB=-50mA
VCB=10V,f=1.0MHz
VEB=10V,f=1.0MHz
VCE=-20V IC=-50mA
f=100MHz
Min Typ
-60
-40
-5
Max
-0.02
-0.05
Unit
V
V
μV
μA
μA
100
300
35
50
75
30
-0.4
-1.6
V
-1.3
-2.6
V
8.0
pF
30
pF
200
MHz
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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