MMBT2369 Datasheet, PDF (1/1 Pages) Diotec Semiconductor – Surface Mount Si-Epi-Planar Switching Transistors

Plastic-Encapsulate Transistors
FEATURES
Epitaxial planar die construction.
Ultra-small surface mount package.
MMBT2369 (NPN)
Marking:M1J
MAXIMUM RATINGS (TA=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
V_CBO
40
V_CEO
15
V_EBO
4.5
I_C
200
PC
300
T_J
150
Tstg
-55 to +150
Unit
V
V
V
mA
mW
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol Test conditions
Min
Collector-base breakdown voltage
VCBO IC=10μA IE=0
40
Collector-emitter breakdown voltage VCEO IC=10mA IB=0
15
Emitter-base breakdown voltage
VEBO IE=10μA IC=0
4.5
Collector cut-off current
ICBO VCB=20V IE=0
DC current gain
VCE=1.0V IC=10mA
40
hFE
VCE=2.0V IC=100mA
20
Collector-emitter saturation voltage VCE(sat) IC=10mA IB=1.0mA
Output capacitance
Small signal current gain
Storage Time
Cobo
hfe
ts
VCE=5.0V,IE=0,f=1.0MH
zIC=10mA,VCE=1
5.0
0V, f=100MHz
IB1=IB2=IC=10mA
Turn-on time
Turn-off time
ton
VCC=3V, IC=10mA,
toff
IVBC1C==3m3VA, _IC=10mA,
IB1=3mA IB2=1.5mA
Max Unit
V
V
V
0.4
uA
120
0.25 V
4.0
pF
13
ns
12
ns
18
ns
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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