MMBT2222A Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN switching transistor

Plastic-Encapsulate Transistors
FEATURES
Epitaxial planar die construction
Complementary PNP Type available(MMBT2907A)
MARKING: 1P
MAXIMUM RATINGS (TA=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
V_CBO
75
V_CEO
40
V_EBO
6
I_C
0.6
PC
0.25
T_J
150
Tstg
-55 to +150
Unit
V
V
V
A
W
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Delay time
Rise time
Storage time
Fall time
VCBO IC= 10μA, IE=0
VCEO _{IC= 10mA, IB=0}
VEBO IE=10μA, IC=0
ICB
ICOE
IEXB
hFOE(1)
VCB=60V, IE=0
VCE=30V,VBE(off)=3V
VEB= 3V, IC=0
VCE=10V, IC= 150mA
hFE(2) VCE=10V, IC= 0.1mA
hFE(3)
VCE(sat)
*
VBE(sat)
*
f
VCE=10V, IC= 500mA
IC=500 mA,IB= 50mA
IC=150 mA, IB=15mA
IC=500 mA,IB= 50mA
IC=150 mA, IB=15mA
VCE=20V, IC= 20mA,
f=100MHz
tTd
VCC=30V, VBE(off)=-0.5V
tr
IC=150mA , IB1= 15mA
tS
VCC=30V, IC=150mA
tf
IB1=-IB2=15mA
MMBT2222A^(NPN)
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
Min
Typ Max Unit
75
V
40
V
6
V
0.01
μA
0.01
μA
0.1
μA
100
300
40
42
1
0.3
V
2.0
1.2
V
300
MHz
10
nS
25
nS
225
nS
60
nS
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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