KTD1304 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (AUDIO MUTING)

Plastic-Encapsulate Transistors
FEATURES
• High emitter-base voltage
• low on resistance
Marking: MAX
Maximum Ratings (Ta=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Value
25
20
12
300
0.2
150
-55to +150
Unit
V
V
V
mA
W
KTD1304 (NPN)
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
ELECTRICAL CHARACTERISTICS ( @ Ta=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ Max Unit
Collector-base breakdown voltage
VCBO
IC=100μA, IE=0
25
V
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
VCEO
IC=1mA, IB=0
20
VEBO
IE=100μA, IC=0
12
ICBO
VCB=25 V, IE=0
V
V
0.1 μA
Emitter cut-off current
IEBO
VEB=12V, IC=0
0.1 μA
DC current gain
hFE(FOR) VCE=2V, IC=4 mA
200
hFE(REV) VCE= 2V, IC= 4mA
20
1000
Collector-emitter saturation voltage
VCE(sat) IC= 100mA, IB=10 mA
0.25
V
Base-emitter saturation voltage
Transition frequency
output capacitance
On resistance
VBE(sat)
fT
C_ob
R_(on)
IC= 100mA, IB=10mA
VCE=10V, IC= 1mA
f=100MHz
VCB=10V,IE=0,f=1MHz
Vin=0.3V,IB=1mA,f=1KHZ
1
V
60
MHz
10
pF
0.6
Ω
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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