KTC4379 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (POWER AMPLIFIER, POWER SWITCHING)

Plastic-Encapsulate Transistors
FEATURES
• Low saturation voltage
• High speed switching time
• Complementary to KTA1666
KTC4379(NPN)
Maximum Ratings (Ta=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
VCBO
50
VCEO
50
VEBO
5
IC
2
PC
500
TJ
150
Tstg
-55to +150
Unit
V
V
V
A
mW
1. BASE
2. COLLECTO
3. EMITTER
SOT-89
ELECTRICAL CHARACTERISTICS ( @ Ta=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Turn on Time
Switching Time
Storage Time
Fall Time
VCBO
VCEO
VEBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
Cob
ton
tstg
tf
IC=1mA, IE=0
IC=10mA, IB=0
IE=1mA, IC=0
VCB=50V, IE=0
VEB=5V, IC=0
VCE=2V, IC=500mA
VCE=2V, IC=1.5A
IC=1A, IB=50mA
IC=1A, IB=50mA
VCE=2V, IC=500mA
VCB=10V, IE=0, f=1MHz
VCC=30V, IC=1A, IB1=-IB2=-0.05A
Min Typ Max Unit
50
V
50
V
5
V
0.1
μA
0.1
μA
70
240
40
0.5
V
1.2
V
120
MHz
30
pF
0.1
1.0
μs
0.1
CLASSIFICATION OF hFE
Rank
Range
Marking
O
70-140
UO
Y
120-240
UY
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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