KTC4377 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (STROBO FLASH, HIGH CURRENT)

Plastic-Encapsulate Transistors
FEATURES
• Low voltage
Maximum Ratings (Ta=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
VCBO
30
VCEO
10
VEBO
6
IC
2
PC
500
TJ
150
Tstg
-55to +150
Unit
V
V
V
A
mW
ELECTRICAL CHARACTERISTICS ( @ Ta=25 unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
VCBO
IC=1mA,IE=0
Collector-emitter breakdown voltage
VCEO
IC=10mA,IB=0
Emitter-base breakdown voltage
VEBO
IE=1mA,IC=0
Collector cut-off current
ICBO
VCB=30V,IE=0
Emitter cut-off current
IEBO
VEB=6V,IC=0
DC current gain
hFE(1)
hFE(2)
VCE=1V,IC=0.5A
VCE=1V,IC=2A
Collector-emitter saturation voltage
VCE(sat) IC=2A,IB=50mA
Base-emitter voltage
VBE
VCE=1V,IC=2A
Transition frequency
fT
VCE=1V,IC=0.5A
Collector output capacitance
Cob
VCB=10V,IE=0,f=1MHz
KTC4377 (NPN)
1. BASE
2. COLLECTO
3. EMITTER
SOT-89
Min Typ Max Unit
30
V
10
V
6
V
0.1
μA
0.1
μA
140
600
70
0.5
V
1.5
V
150
MHz
27
pF
CLASSIFICATION OF hFE
Rank
Range
Marking
A
140-240
SA
B
200-330
SB
C
300-450
SC
D
420-600
SD
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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