KTC4375 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT)

Plastic-Encapsulate Transistors
FEATURES
Low voltage
KTC4375(NPN)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
V_CBO
30
V
V_CEO
30
V
V_EBO
5
V
I_C
1500
mA
P_C
500
mW
Junction Temperature
TJ
150
Storage Temperature
Tstg
-55-150
1. BASE
2. COLLECTO
3. EMITTER
SOT-89
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
VCBO
IC=1mA,IE=0
Collector-emitter breakdown voltage
VCEO
IC=10mA,IB=0
Emitter-base breakdown voltage
VEBO
IE=1mA,IC=0
Collector cut-off current
ICBO
VCB=30V,IE=0
Emitter cut-off current
IEBO
VEB=5V,IC=0
DC current gain
hFE
VCE=2V,IC=0.5A
Collector-emitter saturation voltage
VCE(sat) IC=1.5A,IB=30mA
Base-emitter voltage
VBE VCE=2V,IC=0.5A
Transition frequency
fT
VCE=2V,IC=500mA
Collector output capacitance
Cob VCB=10V,IE=0,f=1MHz
Min Typ Max Unit
30
V
30
V
5
V
0.1
μA
0.1
μA
100
320
2
V
1
V
120
MHz
40
pF
CLASSIFICATION OF HFE
Marking
Range
GO
100-200
GY
160-320
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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