KTC4373 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (HIGH VOLTAGE)

Plastic-Encapsulate Transistors
FEATURES
• High transition frequency:VCEO=120V.
• High voltage:VCE(sat)=0.5V(Max).
• PC=1W(Mounted on ceramic substrate).
• Small flat package.
• Complementary: KTA1661.
Maximum Ratings (Ta=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
VCBO
120
VCEO
120
VEBO
5
IC
0.8
PC
500
TJ
150
Tstg
-55to +150
Unit
V
V
V
A
mW
KTC4373 (NPN)
1. BASE
2. COLLECTO
3. EMITTER
SOT-89
ELECTRICAL CHARACTERISTICS ( @ Ta=25 unless otherwise specified)
Parameter
Symbol
Collector-base
breakdown voltage
V_CBO
Collector-emitter
breakdown voltage _VCEO
Emitter-base breakdown voltage
V_EBO
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter
saturation
Base-emitter voltage
voltage
I_CBO
I_EBO
h_FE
V_CE(sat)
V_BE
Transition frequency
f_T
Test conditions
I_C=1mA,I_E=0
I_C=10mA,I_B=0
I_E=1mA,I_C=0
V_CB=120V,I_E=0
V_EB=5V,I_C=0
V_CE=5V,I_C=100mA
I_C=500mA, I_B= 50mA
V_CE=5V, I_B= 500mA
V_CE=5V, I_C= 0.1A
Min _{Typ Max Unit}
120
V
120
V
5
V
0.1
μA
0.1
μA
80
240
1.0
V
1.0
V
120
MHz
Collector output capacitance
C_ob
V_CB=10V,I_E=0,f=1MHz
30
pF
CLASSIFICATION OF hFE
Rank
Range
Marking
O
80-160
CO
Y
120-240
CY
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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