KTC3879 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (HIGH FREQUENCY, HF VHF BAND AMPLIFIER)

Plastic-Encapsulate Transistors
FEATURES
• High power gain
KTC3879 (NPN)
Maximum Ratings (Ta=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
VCBO
35
VCEO
30
VEBO
4
IC
50
PC
0.15
TJ
150
Tstg
-55to +150
Unit
V
V
V
mA
W
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
ELECTRICAL CHARACTERISTICS ( @ Ta=25
Parameter
Symbol
unless otherwise specified)
Test conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
V_CBO
V_CEO
V_EBO
I_C=100μA,I_E=0
I_C=100μA,I_B=0
I_E=100μA,I_C=0
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
I_CBO
I_EBO
h_FE
V_CE(sat)
V_BE(sat)
f_T
Cob
V_CB=35V,I_E=0
V_EB=4V,I_C=0
V_CE=12V,I_C=2mA
I_C=10mA, I_B=1mA
I_C=10mA, I_B=1mA
V_CE=10V, I_C= 1mA
V_CB=10V,IE=0,f=1MHz
Min _{Typ Max Unit}
35
V
30
V
4
V
0.1
μA
1.0
μA
40
240
0.4
V
100
1.4
2.0
1.0
V
400 MHz
3.2
pF
CLASSIFICATION OF hFE
Rank
Range
Marking
R
40-80
RR
O
70-140
RO
Y
120-240
RY
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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