KTC3875 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)

Plastic-Encapsulate Transistors
FEATURES
• High hFE
• Low noise
• Complementary to KTA1504
KTC3875(NPN)
Maximum Ratings (TA=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
60
50
5
0.15
0.15
150
-55to +150
Unit
V
V
V
A
W
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
ELECTRICAL CHARACTERISTICS ( @ Ta=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
VCBO
IC=100μA,IE=0
Collector-emitter breakdown voltage
VCEO
IC= 1mA, IB=0
Emitter-base breakdown voltage
VEBO
IE= 100μA, IC=0
Collector cut-off current
ICBO
VCB= 60V, IE=0
Emitter cut-off current
IEBO
VEB= 5V, IC=0
DC current gain
hFE
VCE= 6V, IC= 2mA
Collector-emitter saturation voltage
VCE(sat) IC=100mA, IB= 10mA
base-emitter saturation voltage
VBE(sat) IC=100mA, IB= 10mA
Transition frequency
Collector output capacitance
fT
VCE=10V, IC= 1mA
C_ob
VCB=10V,IE=0,f=1MHZ
Noise figure
NF
VCE=6V,IC=0.1mA,Rg=10kΩ,f=1KHZ
Min Typ Max Unit
60
V
50
V
5
V
0.1
μA
0.1
μA
70
700
0.1 0.25
V
1
V
80
MHz
2.0 3.5
pF
1.0
10
dB
CLASSIFICATION OF hFE
Rank
Range
Marking
O
70-140
ALO
Y
120-240
ALY
GR
200-400
ALG
BL
350-700
ALL
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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