KTC3265 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (LOW FREQUENCY POWER AMPLIFIER,POWER SWITCHING)

Plastic-Encapsulate Transistors
FEATURES
High DC current gain
Complementary to KTA1298
MAXIMUM RATINGS (TA=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
V_CBO
35
V_CEO
30
V_EBO
5
I_C
800
PC
200
T_J
150
Tstg
-55 to +150
Unit
V
V
V
mA
mW
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Collector-base breakdown voltage
Symbol
VCBO
Test conditions
IC= 100μA, IE=0
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
VCEO
VEBO
IC= 10mA, IB=0
IE=100μA, IC=0
Collector cut-off current
ICBO
VCB=30 V, IE=0
Collector cut-off current
IEBO
VEB=5 V, IC=0
DC current gain
hFE
VCE=1V, IC= 100mA
Collector-emitter saturation voltage
VCE(sat) IC=500mA, IB=20mA
base-emitter voltage
Transition frequency
V BE
VCE=1V,IC=10mA
fT
VCE=5V, IC=10mA
f=100MHz
Collector output capacitance
C_ob
VCB=10V,IE=0,f=1MHZ
CLASSIFICATION OF h_FE
Marking
EO
Range
100-200
EY
160-320
KTC3265(NPN)
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
Min
Typ Max Unit
35
V
30
V
5
V
0.1
μA
0.1
μA
100
320
0.5
V
0.5
0.8
V
120
MHz
13
pF
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
Page:P2-P1