KTA1666 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (POWER AMPLIFIER, POWER SWITCHING)

Plastic-Encapsulate Transistors
FEATURES
• High speed switching time.
• Low saturation voltage:VCE(sat)=-0.5V(Max)
• PC=1~2W(Mounted on ceramic substrate)
• Small flat package.
• Complementary: KTC4379.
• Power amplifier application.
KTA1666 (PNP)
Maximum Ratings (Ta=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
VCBO
-50
VCEO
-50
VEBO
-5
IC
-2
PC
500
TJ
150
Tstg
-55to +150
Unit
V
V
V
A
mW
1. BASE
2. COLLECTO
3. EMITTER
SOT-89
ELECTRICAL CHARACTERISTICS ( @ Ta=25 unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
VCBO
VCEO
VEBO
IC=-1mA,IE=0
IC=-10mA,IB=0
IE=-1mA,IC=0
Collector cut-off current
Emitter cut-off current
ICBO
IEBO
VCB=-50V,IE=0
VEB=-5V,IC=0
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
hFE
VCE(sat)
VBE(sat)
VCE=-2V,IC=-500mA
VCE=-2V,IC=-1.5A
IC=-1A, IB= -50mA
IC=-1A, IB= -50mA
Transition frequency
fT
VCE=-2V, IC= -0.5A
Collector output capacitance
Cob
VCB=-10V,IE=0,f=1MHz
Min
-50
-50
-5
70
Typ
Max Unit
V
V
V
-0.1 μA
-0.1 μA
240
40
-0.5 V
-1.2 V
120
MHz
40
pF
CLASSIFICATION OF hFE
Rank
Range
Marking
O
70-140
WO
Y
120-240
WY
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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