KTA1663 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (HIGH CURRENT)

Plastic-Encapsulate Transistors
FEATURES
• High current applications
•Complementary to KTC4375
Maximum Ratings (Ta=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
VCBO
-30
VCEO
-30
VEBO
-5
IC
-1.5
PC
500
TJ
150
Tstg
-55to +150
Unit
V
V
V
A
mW
ELECTRICAL CHARACTERISTICS ( @ Ta=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
VCBO
VCEO
VEBO
ICBO
IEBO
hFE
VCE(sat)
VBE
fT
Cob
IC=-1mA, IE=0
IC=-10mA, IB=0
IE=-1mA, IC=0
VCB=-30V, IE=0
VEB=-5V, IC=0
VCE=-2V, IC=-0.5A
IC=-1.5A, IB=-30mA
VCE=-2V, IC=-0.5A
VCE=-2V, IC=-500mA
VCB=-10V, IE=0,f=1MHz
CLASSIFICATION OF hFE
Rank
Range
O
100-200
KTA1663 (PNP)
1. BASE
2. COLLECTO
3. EMITTER
SOT-89
Min
Typ Max Unit
-30
V
-30
V
-5
V
-0.1
μA
-0.1
μA
100
320
-2
V
-1
V
120
MHz
50 MHz
Y
160-320
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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