KTA1298 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (LOW FREQUENCY POWER AMPLIFIER, POWER SWITCHING)

Plastic-Encapsulate Transistors
FEATURES
Low frequency power amplifier application
Power switching application
KTA1298 (PNP)
MAXIMUM RATINGS (TA=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
V_CBO
-35
V_CEO
-30
V_EBO
-5
I_C
-800
PC
200
T_J
150
Tstg
-55 to +150
Unit
V
V
V
mA
mW
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base- emitter voltage
Transition frequency
Collector output capacitance
VCBO
IC=- 1mA,IE=0
VCEO
IC= -10mA, IB=0
VEBO
IE=-1mA, IC=0
ICBO
VCB=-30 V,IE=0
IEBO
VEB= -5V,IC=0
hFE(1)
VCE=-1V, IC=-100mA
hFE(2)
VCE=-1V, IC=-800mA
VCE(sat) IC=-500mA, IB= -20mA
VBE
VCE=-1V, IC=-10mA
fT
VCE=-5V, IC=-10mA,
Cob
VCB=-10V, IE=0,f=1MHz
Min
-35
-30
-5
100
40
-0.5
CLASSIFICATION OF h_FE
Marking
IO
Range
100-200
IY
160-320
Typ Max Unit
V
V
V
-0.1
μA
-0.1
μA
320
-0.4
V
-0.8
V
120
MHz
13
pF
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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