IRLML6402 Datasheet, PDF (1/4 Pages) International Rectifier – HEXFET Power MOSFET

Plastic-Encapsulate Mosfets
IRLML6402
l Ultra Low On-Resistance
l P-Channel MOSFET
l SOT-23 Footprint
l Low Profile (<1.1mm)
l Available in Tape and Reel
G
l Fast Switching
l Lead-Free
l Halogen-Free
l Marking: 1E
Absolute Maximum Ratings
Parameter
V_DS
I_D @ T_A = 25°C
I_D @ T_A= 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
Drain- Source Voltage
Continuous Drain Current, V_GS @ -4.5V
Continuous Drain Current, V_GS @ -4.5V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
E_AS
V_GS
T_J, T_STG
Single Pulse Avalanche Energy„
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
Parameter
R_θJA
Maximum Junction-to-Ambientƒ
Power MOSFET
D
V_DSS = -20V
R_DS(on) = 0.065Ω
S
Max.
-20
-3.7
-2.2
-22
1.3
0.8
0.01
11
± 12
-55 to + 150
Typ.
75
Max.
100
Units
V
A
W
W/°C
mJ
V
°C
Units
°C/W
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
V_(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
R_DS(on)
Static Drain-to-Source On-Resistance
V_GS(th)
g_fs
Gate Threshold Voltage
Forward Transconductance
I_DSS
Drain-to-Source Leakage Current
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
-20 ––– ––– V V_GS = 0V, I_D = -250µA
––– -0.009 –––
––– 0.050 0.065
––– 0.080 0.135
V/°C
Ω
Reference to 25°C, I_D = -1mA ‚
V_GS = -4.5V, I_D = -3.7A ‚
V_GS = -2.5V, I_D = -3.1A ‚
-0.40 -0.55 -1.2 V V_DS = V_GS, I_D = -250µA
6.0 ––– ––– S V_DS = -10V, I_D = -3.7A ‚
––– ––– -1.0
––– ––– -25
µA
V_DS = -20V, V_GS = 0V
V_DS = -20V, V_GS = 0V, T_J = 70°C
––– ––– -100 _nA V_GS = -12V
––– ––– 100
V_GS = 12V
––– 8.0 12
I_D = -3.7A
––– 1.2 1.8 nC V_DS = -10V
––– 2.8 4.2
V_GS = -5.0V ‚
––– 350 –––
V_DD = -10V
––– 48 ––– _ns I_D = -3.7A
––– 588 –––
R_G = 89Ω
––– 381 –––
R_D = 2.7Ω
––– 633 –––
V_GS = 0V
––– 145 ––– pF V_DS = -10V
––– 110 –––
ƒ = 1.0MHz
GUANGDONG HOTTECH INDUSTRIAL CO., LTD.
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