IRLML6401 Datasheet, PDF (1/4 Pages) International Rectifier – HEXFET Power MOSFET

Plastic-Encapsulate Mosfets
IRLML6401
l Ultra Low On-Resistance
l P-Channel MOSFET
l SOT-23 Footprint
*
l Low Profile (<1.1mm)
l Available in Tape and Reel
l Fast Switching
l 1.8V Gate Rated
6
l Lead-Free
l Halogen-Free
l Marking: 1F
Absolute Maximum Ratings
V_DS
I_D @ T_A = 25°C
I_D @ T_A= 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
E_AS
V_GS
T_J, T_STG
Parameter
Drain- Source Voltage
Continuous Drain Current, V_GS @ -4.5V
Continuous Drain Current, V_GS @ -4.5V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy„
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
Parameter
R_θJA
Maximum Junction-to-Ambientƒ
Power MOSFET
V_DSS = -12V
'
R_DS(on) = 0.05Ω
Max.
-12
-4.3
-3.4
-34
1.3
0.8
0.01
33
± 8.0
-55 to + 150
Typ.
75
Max.
100
Units
V
A
W
W/°C
mJ
V
°C
Units
°C/W
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
V_(BR)DSS Drain-to-Source Breakdown Voltage
∆V_(BR)DSS/∆T_J Breakdown Voltage Temp. Coefficient
R_DS(on)
Static Drain-to-Source On-Resistance
V_GS(th)
g_fs
I_DSS
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
-12 ––– ––– V V_GS = 0V, I_D = -250µA
––– -0.007 ––– V/°C Reference to 25°C, I_D = -1mA
––– ––– 0.050
––– ––– 0.085
Ω
V_GS = -4.5V, I_D = -4.3A ‚
V_GS = -2.5V, I_D = -2.5A ‚
––– ––– 0.125
V_GS = -1.8V, I_D = -2.0A ‚
-0.40 -0.55 -0.95 V V_DS = V_GS, I_D = -250µA
8.6 ––– ––– S V_DS = -10V, I_D = -4.3A
––– ––– -1.0
––– ––– -25
V_DS = -12V, V_GS = 0V
µA _{VDS = -9.6V, VGS = 0V, TJ = 55°C}
––– ––– -100
V_GS = -8.0V
––– ––– 100 ^nA V_GS = 8.0V
––– 10 15
I_D = -4.3A
––– 1.4 2.1
––– 2.6 3.9
nC V_DS = -10V
V_GS = -5.0V‚
––– 11 ––– _ns V_DD = -6.0V
––– 32 –––
I_D = -1.0A
––– 250 –––
R_D = 6.0Ω
––– 210 –––
R_G = 89Ω ‚
––– 830 –––
V_GS = 0V
––– 180 ––– pF V_DS = -10V
––– 125 –––
ƒ = 1.0MHz
GUANGDONG HOTTECH INDUSTRIAL CO., LTD.
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