FMMT491 Datasheet, PDF (1/2 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

Plastic-Encapsulate Transistors
FEATURES
Low equivalent on-resistance
Marking:491
MAXIMUM RATINGS (TA=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
V_CBO
80
V_CEO
60
V_EBO
5
I_C
1000
PC
250
T_J
150
Tstg
-55 to +150
Unit
V
V
V
mA
mW
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
VCBO
VCEO1
IC=100μA,IE=0
IC=10mA,IB=0
Emitter-base breakdown voltage
VEBO
IE=100μA,IC=0
Collector cut-off current
ICBO
VCB=60V,IE=0
Emitter cut-off current
IEBO
VEB=4V,IC=0
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
hFE(1)
hFE(2) ¹
hFE(3) ¹
hFE(4) ¹
VCE(sat)1 ¹
VCE(sat)2 ¹
VBE(sat) ¹
VBE1
fT
VCE=5V,IC=1mA
VCE=5V,IC=500mA
VCE=5V,IC=1A
VCE=5V,IC=2A
IC=500mA,IB=50mA
IC=1A,IB=100mA
IC=1A,IB=100mA
VCE=5V,IC=1A
VCE=10V,IC=50mA,,f=100MHz
Collector output capacitance
Cob
VCB=10V,f=1MHz
1Measured under pulsed conditions, Pulse width=300 s, Duty cycle 2%.
FMMT491(NPN)
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
Min Typ Max Unit
80
V
60
V
5
V
0.1
μA
0.1
μA
100
100
300
80
30
0.25
V
0.5
V
1.1
V
1
V
150
MHz
10
pF
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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