D965 Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR（ NPN ）

Plastic-Encapsulate Transistors
FEATURES
Audio amplifier
Flash unit of camera
Switching circuit
D965 (NPN)
Maximum Ratings (TA=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power dissipation
Storage Temperature
unless otherwise noted)
Symbol
Val
VCBO
VCEO
VEBO
IC
PC
Tstg
42
22
6
5
0.75
-55to +150
Units
V
V
V
A
W
1. EMITTER
2. COLLECTO
3. BASE
ELECTRICAL CHARACTERISTICS ( @ Ta=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Collector-base breakdown voltage
VCBO
Ic=1mA IE=0
42
Collector-emitter breakdown voltage
VCEO
Ic= 1 mA IB=0
22
Emitter-base breakdown voltage
VEBO
IE= 10 μA IC=0
6
Collector cut-off current
Emitter cut-off current
ICBO
VCB= 30 V , IE=0
IEBO
VEB= 6 V IC=0
HFE 1
VCE= 2 V, IC= 0.15mA
150
DC current gain
HFE 2
HFE 3
VCE= 2V, IC = 500 mA
340
VCE= 2V, IC = 2000mA
150
TO-92
Max Unit
V
V
V
0.1 ^μA
0.1 ^μA
950
Collector-emitter saturation voltage
VCE(sat) IC=3000mA, IB=100 mA
0.35
V
CLASSIFICATION OF h_FE(1)
Rank
Range
R
340-600
T
560-950
GUANGDONG HOTTECH INDUSTRIAL CO., LTD.
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