CXT5551 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT NPN SILICON TRANSISTORS

Plastic-Encapsulate Transistors
FEATURES
• Switching and amplification in high voltage
Applications such as telephony
• Low current(max. 600mA)
• High voltage(max.180v)
Marking: 5551
Maximum Ratings (Ta=25 unless otherwise noted)
Parameter
Symbol Value
Unit
Collector-Base Voltage
VCBO
180
V
Collector-Emitter Voltage
VCEO
160
V
Emitter-Base Voltage
VEBO
6
V
Collector Current -Continuous
IC
600
mA
Collector Power dissipation
Junction Temperature
Storage Temperature
PC
500
mW
TJ
150
Tstg -55to +150
ELECTRICAL CHARACTERISTICS ( @ Ta=25 unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Noise figure
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VCE(sat)
VBE(sat)
VBE(sat)
fT
Cob
IC=100μ A,IE=0
IC=1mA,IB=0
IE=10 μ A,IC=0
VCB=120V,IE=0
VEB=4V,IC=0
VCE=5V,IC=1mA
VCE=5V,IC=10mA
VCE=5V,IC=50mA
IC=10mA,IB=1mA
IC=50mA,IB=5mA
IC=10mA,IB=1mA
IC=50mA,IB=5mA
VCE=10V,IC=10mA,f=100MHz
VCB=10V,IE=0,f=1MHz
NF
VCE=5V,Ic=0.2mA,
f=10Hzto15.7KHZ,Rs=10Ω
CXT5551 (NPN)
1. BASE
2. COLLECTO
3. EMITTER
SOT-89
Min Typ Max Unit
180
V
160
V
6
V
50
nA
50
nA
80
80
300
30
0.15
V
0.2
V
1
V
1
V
100
MHz
6
pF
8
dB
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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