CXT5401 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT PNP SILICON TRANSISTOR

Plastic-Encapsulate Transistors
FEATURES
• Switching and amplification in high voltage
Applications such as telephony
• Low current(max. 500mA)
• High voltage(max.160v)
CXT5401 (PNP)
Marking: 5401
Maximum Ratings (Ta=25 unless otherwise noted)
Parameter
Symbol Value
Unit
Collector-Base Voltage
VCBO
-160
V
Collector-Emitter Voltage
VCEO
-150
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current -Continuous
IC
500
mA
Collector Power dissipation
Junction Temperature
Storage Temperature
PC
500
mW
TJ
150
Tstg -55to +150
1. BASE
2. COLLECTO
3. EMITTER
SOT-89
ELECTRICAL CHARACTERISTICS ( @ Ta=25 unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output Capacitance
Noise Figure
Symbol
VCBO
VCEO
VEBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VCE(sat)
VBE(sat)
VBE(sat)
fT
Cob
NF
Test conditions
IC= -100μA, IE=0
IC = -1mA, IB=0
IE = -10μA, IC=0
VCB = -120 V, IE=0
VEB= -3V, IC=0
VCE= -5V, IC=-1 mA
VCE= -5V, IC= -10 mA
VCE= -5V, IC=-50 mA
IC= -10 mA, IB= -1 mA
IC= -50 mA, IB= -5 mA
IC= -10 mA, IB= -1 mA
IC= -50 mA, IB= -5 mA
VCE= -10V, IC= -10mA, f
= 100MHz
VCB=-10V, IE= 0,f=1MHz
VCE= -5.0V, IC= -200μA,
RS= 10Ω,f =10Hz to15.7kHz
Min
Typ
Max
Unit
-160
V
-150
V
-5
V
-50
nA
-50
nA
50
60
300
50
-0.2
V
-0.5
V
-1
V
-1
V
100
300
MHz
6
pF
8
dB
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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