CD4148WTP Datasheet, PDF (1/2 Pages) Mospec Semiconductor – Small-Signal Chip Diode

Chip Diodes
Switching Diode
FEATURES
• Silicon epitaxial planar diode
• SMD chip pattern, available in various dimension included 1206 & 0805
• Leadfree and RoHS compliance components
• For small signal switching and operating ambient temperature less than
55oC and voltage withstand less than 60V; not suitable for AC switching
input as rectified circuit and high reverse voltage location
MECHANICAL CHARACTERISTICS
• Size: 0603
• Weight: approx. 4mg
• Marking: Cathode terminal
THERMAL CHARACTERISTICS1)
Parameter at T_amb=25^oC¹⁾
Symbol
Forward Power Dissipation
P_tot
Power derating above 25^oC
Junction Temperature
Thermal Resistance Junction to Ambient air
Operating& Storage Temperature range
MAXIMUM RATING¹⁾
Parameter at T_amb=25^oC¹⁾
Repetitive Peak Reverse Voltage
Average rectified current sin half wave rectification
with resistive load
T_j
R_θJA
T_stg
Symbol
V_RRM
I_F(AV)
Repetitive Peak Forward Current at T_amb=25°C
I_FRM
Non-Repetitive Surge Forward Current at t<1s and
T_j=25^oC
I_FSM
at t 8.3ms and T_j=25^oC
ELECTRICAL CHARACTERISTICS¹⁾
Parameter at T_amb=25^oC¹⁾
Symbol
Forward Voltage at I_F=10mA
V_F
at I_F=100mA
Leakage Current at V_R=20V Leakage
I_R
Current at V_R=75V
Capacitance at V_R=0V, f=1MHz
C_tot
Reverse Recovery Time at I_F =I_R=10mA,R_L=100Ω
t_rr
1) Valid provided that electrodes are kept at ambient temperature.
CD4148 WTP
0603
L
1.55±0.1 mm
W
0.80±0.1 mm
T
0.65±0.1 mm
C
0.35±0.1 mm
Value
200
1.6
150
375
-55 to 150
Value
75
100
200
400
800
Value
1.0 _MAX
1.25 _MAX
0.025 _MAX
5 _MAX
4 _MAX
4 _MAX
Unit
mW
mW/ ^oC
o_C
o_C/W
o_C
Unit
V
mA
mA
mA
mA
Unit
V
V
uA
uA
pF
ns
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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