C1815 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – TRANSISTOR NPN

Plastic-Encapsulate Transistors
FEATURES
Complementary type the PNP transistor
A1015 is recommended.
MARKING: HF
MAXIMUM RATINGS (TA=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
V_CBO
60
V_CEO
50
V_EBO
5
I_C
150
PC
0.2
T_J
150
Tstg
-55 to +150
Unit
V
V
V
mA
W
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Symbol
VCBO
VCEO
VEBO
Test conditions
IC= 100uA, IE=0
IC= 0.1mA, IB=0
IE=100μA, IC=0
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
ICBO VCB=60V, IE=0
ICE
VCE=50V, IB=0
IEOB
VEB= 5V, IC=0
hOFE
VCE= 6V, IC= 2mA
VCE(sat) IC=100mA, IB= 10mA
VBE(sat)
fT
IC=100mA, IB= 10mA
VCE=10V, IC= 1mA,
f=30MHz
CLASSIFICATION OF h_FE
Rank
L
Range
130-200
H
200-400
C1815 ^(NPN)
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
Min
Typ
Max Unit
60
V
50
V
5
V
0.1
uA
0.1
uA
0.1
uA
130
400
0.25
V
1
V
80
MHz
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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