BF620 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN high-voltage transistors

Plastic-Encapsulate Transistors
FEATURES
• Low current (max. 50mA)
• High voltage (max. 300V).
• Video output stages.
Marking: DC
Maximum Ratings (Ta=25 unless otherwise noted)
Parameter
Symbol Value
Unit
Collector-Base Voltage
VCBO
300
V
Collector-Emitter Voltage
VCEO
300
V
Emitter-Base Voltage
VEBO
5
V
Collector Current -Continuous
IC
50
mA
Collector Power dissipation
Junction Temperature
Storage Temperature
PC
500
mW
TJ
150
Tstg -55to +150
ELECTRICAL CHARACTERISTICS ( @ Ta=25
Parameter
Symbol
unless otherwise specified)
Test conditions
Collector-base breakdown voltage
VCBO
IC=100μA, IE=0
Collector-emitter breakdown voltage
VCEO
IC=1mA, IB=0
Emitter-base breakdown voltage
VEBO
IE=100μA, IC=0
Collector cut-off current
ICBO VCB=200V, IE=0
Emitter cut-off current
IEBO
VEB=5V, IC=0
DC current gain
hFE
VCE=20V, IC=25mA
Collector-emitter saturation voltage
VCE(sat) IC=30mA, IB=5mA
Transition frequency
fT
VCE=10V, IC=10mA, f=100MHz
BF620 (NPN)
1. BASE
2. COLLECTO
3. EMITTER
SOT-89
Min Typ Max Unit
300
V
300
V
5
V
10
nA
50
nA
50
0.6
V
60
MHz
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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