BCX51 Datasheet, PDF (1/2 Pages) NXP Semiconductors – PNP medium power transistors

Plastic-Encapsulate Transistors
FEATURES
IC = -1A Continuous Collector Current
Low Saturation Voltage VCE(sat) < -500mV @ -0.5A
Epitaxial Planar Die Construction
Complementary NPN types: BCX54, 55, and 56
BCX51/52/53 (PNP)
1. BASE
2. COLLECTO
3. EMITTER
SOT-89
Product
Marking
BCX51
AA
BCX51-10 BCX51-16
AC
AD
BCX52
AE
BCX52-10 BCX52-16
AG
AM
BCX53
AH
BCX53-10 BCX53-16
AK
AL
Maximum Ratings (Ta=25 unless otherwise noted)
Characteristic
Collector-Base Voltage
Symbol
VCBO
BCX51
BCX52
BCX53
Unit
-45
-60
-100
V
Collector-Emitter Voltage
VCEO
-45
-60
-80
V
Emitter-Base Voltage
VEBO
-5
V
Continuous Collector Current
IC
-1
Peak Pulse Collector Current
ICM
-1.5
A
Continuous Base Current
IB
-100
Peak Pulse Base Current
IBM
-200
mA
Power Dissipation (Note 1)
PD
1
W
Operating and Storage Temperature Range
TJ, TSTG
-65 to +150
°C
ELECTRICAL CHARACTERISTICS ( @ Ta=25 unless otherwise specified)
Characteristic
Symbol Min Typ Max Unit Test Condition
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage (Note 2)
BCX51
BCX52
BCX53
BCX51
BCX52
BCX53
-45
BVCBO
-60
-
-
V IC = -100µA
-100
-45
BVCEO
-60
-
-
V IC = -10mA
-80
Emitter-Base Breakdown Voltage
BVEBO
-5
-
-
V ^{IE = -10µA}
Collector Cut-off Current
ICBO
-
Emitter Cut-off Current
IEBO
-
25
All versions
40
Static Forward Current Transfer Ratio (Note 2)
hFE
25
10 gain grp
63
Collector-Emitter Saturation Voltage (Note 2)
Base-Emitter Turn-On Voltage (Note 2)
16 gain grp
100
VCE(sat)
-
VBE(on)
-
-
-0.1
µA ^{VCB = -30V}
-20
VCB = -30V, TA = 150°C
-
-20
nA ^{VEB = -4V}
-
-
-
250
-
-
IC = -5mA, VCE = -2V
IC = -150mA, VCE = -2V
IC = -500mA, VCE = -2V
-
160
IC = -150mA, VCE = -2V
-
250
IC = -150mA, VCE = -2V
-
-0.5
V ^{IC = -500mA, IB = -50mA}
-
-1.0
V ^{IC = -500mA, VCE = -2V}
Transition Frequency
Output Capacitance
fT
150
-
-
MHz ^{IC = -50mA, VCE = -10V}
f = 100MHz
Cobo
-
-
25
pF ^{VCB = -10V, f = 1MHz}
Notes: 1. For a device surface mounted on 25 mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
Notes: 2. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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