BCP54 Datasheet, PDF (1/3 Pages) NXP Semiconductors – NPN medium power transistors

Plastic-Encapsulate Transistors
FEATURES
For AF driver and output stages
High collector current
Low collector-emitter saturation voltage
Complementary types: BCP51...BCP53 (PNP)
BCP54/55/56(NPN)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Parameter
Symbol BCP54 BCP55 BCP56 Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance Junction to Ambient
Storage Temperature
V_CBO
V_CEO
V_EBO
I_C
I_C
RθJA
Tstg
45
60
100
45
60
80
5
1000
1.5
94
-55 to +150
V
V
V
mA
W
℃/W
1. BASE
2. COLLECTO
3. EMITTER
SOT-223
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
BCP54
BCP55
BCP56
BCP54
BCP55
BCP56
Symbol Test conditions
Min
45
VCBO
IC= 0.1mA,IE=0
60
100
45
VCEO
IC= 10mA,IB=0
60
80
Base-emitter breakdown voltage
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
VEBO
IC= 10μA,IE=0
5
ICBO
VCB= 30 V, IE=0
hFE(1)
VCE= 2V, IC=5mA
25
hFE(2)
VCE= 2V, IC=150m A
63
hFE(3)
VCE= 2V, IC=500m A
25
VCE(sat) IC=500mA,IB=50mA
VBE
VCE=2V, IC=500m A
fT
VCE=10V,IC=50mA,f=100MHz 100
Max
100
250
0.5
1
Unit
V
V
V
nA
V
V
MHz
CLASSIFICATION OF h_FE(2)
Rank
BCP54-10, BCP55-10, BCP56-10
Range
63-160
BCP54-16, BCP55-16, BCP56-16
100-250
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