BC847PN Datasheet, PDF (1/2 Pages) Siemens Semiconductor Group – NPN/PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)

Plastic-Encapsulate Transistors
COMPLEMENTARY PAIR SMALL SIGNAL SURFACE
MOUNT TRANSISTOR
Features
· Epitaxial Die Construction
· Two internal isolated NPN/PNP Transistors in
one package
· Ultra-Small Surface Mount Package
Mechanical Data
· Case: SOT-363, Molded Plastic
· Case material - UL Flammability Rating
Classification 94V-0
· Moisture sensitivity: Level 1 per J-STD-020A
· Terminals: Solderable per MIL-STD-202,
Method 208
· Terminal Connections: See Diagram
· Marking (See Page 3): K7P
· Ordering & Date Code Information: See Page 3
· Weight: 0.006 grams (approx.)
BC847PN
C₁
B₂
E₂
E₁
B₁
C₂
G
SOT-363
Maximum Ratings ^{@ T}A ^{= 25°C unless otherwise specified} Total Device
Characteristic
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Symbol
Pd
R_qJA
Tj, TSTG
Value
200
625
-65 to +150
Unit
mW
°C/W
°C
Maximum Ratings ^{@ TA = 25°C unless otherwise specified} NPN BC847B Section
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Emitter Current
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
IEM
Value
50
45
6.0
100
200
200
Unit
V
V
V
mA
mA
mA
Maximum Ratings ^{@ TA = 25°C unless otherwise specified} PNP BC857B Section
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Emitter Current
Symbol
VCBO
VCEO
VEBO
I_C
ICM
IEM
Value
-50
-45
-5.0
-100
-200
-200
Unit
V
V
V
mA
mA
mA
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
Page:P2-P1