BC818-16 Datasheet, PDF (1/2 Pages) Micro Commercial Components – NPN Silicon General Purpose Transistors

Plastic-Encapsulate Transistors
FEATURES
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage
Marking
BC818-16 BC818-25 BC818-40
6E
6F
6G
MAXIMUM RATINGS (TA=25
Parameter
Collector-Base Voltage
DCollector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
V_CBO
30
V_CEO
25
V_EBO
5
I_C
500
PC
300
T_J
150
Tstg
-55 to +150
Unit
V
V
V
mA
mW
BC818-16 ^(NPN)
BC818-25 ^(NPN)
BC818-40 ^(NPN)
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Collecter capactiance
Transition frequency
Symbol
VCB
VOCE
VOEB
ICOB
IEOB
hFOE(1
hFE) (2
VCE)(sat)
VBE(sat)
VB
CEob
f
T
Test conditions
IC= 10μA, IE=0
IC= 10mA, IB=0
IE= 10μA, IC=0
VCB= 25 V , IE=0
VEB= 4V, IC=0
VCE= 1V, IC= 100mA
VCE= 1V, IC= 300mA
IC= 500mA, IB= 50mA
IC= 500mA, IB= 50mA
VCE=1V, IC= 500mA
VCB=10V ,f=1MHz
VCE= 5 V, IC= 50Ma
f=100MHz
CLASSIFICATION OF h_FE
Rank
6E
6F
Range
100-250
160-400
Min
30
25
5
100
60
Max Unit
V
V
V
0.1
μA
0.1
μA
630
0.7
V
1.2
V
1.2
V
6
pF
170
MHz
6G
250-630
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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