BC817 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN general purpose transistor

Plastic-Encapsulate Transistors
FEATURES
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage
Complementary types: BC807 (PNP)
Marking
BC817-16
6A
BC817-25
6B
BC817-40
6C
BC817-16 ^(NPN)
BC817-25 ^(NPN)
BC817-40 ^(NPN)
MAXIMUM RATINGS (TA=25
Parameter
Collector-Base Voltage
DCollector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
V_CBO
50
V_CEO
45
V_EBO
5
I_C
500
PC
300
T_J
150
Tstg
-55 to +150
Unit
V
V
V
mA
mW
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Collecter capactiance
Transition frequency
VCB
VOCE
VOEB
ICOB
IEOB
hFOE(1
hFE) (2
VCE)(sat)
VBE(sat)
VB
CEob
fT
IC= 10μA, IE=0
IC= 10mA, IB=0
IE= 1μA, IC=0
VCB= 45 V , IE=0
VEB= 4V, IC=0
VCE= 1V, IC= 100mA
VCE= 1V, IC= 500mA
IC= 500mA, IB= 50mA
IC= 500mA, IB= 50mA
VCE= 1 V, IC= 500mA
VCB=10V ,f=1MHz
VCE= 5 V, IC= 10mA
f=100MHz
Min
50
45
5
100
40
100
Max Unit
V
V
V
0.1
μA
0.1
μA
600
0.7
V
1.2
V
1.2
V
10
pF
MHz
CLASSIFICATION OF h_FE
Rank
Range
6A
100-250
6B
160-400
6C
250-600
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
Page:P2-P1