BC808-16 Datasheet, PDF (1/2 Pages) Micro Commercial Components – PNP Silicon General Purpose Transistors

Plastic-Encapsulate Transistors
FEATURES
Suitable for AF-Driver stages and low power output stages
Complement to BC818
BC808-16
5E
BC808-25
5F
BC808-40
5G
BC808-16 (PNP)
BC808-25 ^(PNP)
BC808-40 ^(PNP)
MAXIMUM RATINGS (TA=25
Parameter
Collector-Base Voltage
DCollector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
V_CBO
-30
V_CEO
-25
V_EBO
-5
I_C
800
PC
300
T_J
150
Tstg
-55 to +150
Unit
V
V
V
mA
mW
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
VCBO IC=-100μA, IE=0
Collector-emitter breakdown voltage
VCEO IC=-10mA, IB=0
Emitter-base breakdown voltage
VEBO IE=-100μA, IC=0
Collector cut-off current
ICBO VCB=-25V, IE=0
Emitter cut-off current
IEBO VEB=-4V, IC=0
DC current gain
hFE(1) VCE=-1V, IC=-100mA
hFE(2) VCE=-1V, IC=-300mA
Collector-emitter saturation voltage
VCE(sat) IC=-500mA, IB=-50mA
Base-emitter voltage
VBE VCE=-1V, IC=-300mA
Transition frequency
fT
VCE=-5V, IC=-10mA, f=50MHz
Collector output capacitance
Cob VCB=-10V, IE=0, f=1MHz
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
Min Typ Max Unit
-30
V
-25
V
-5
V
-0.1
μA
-0.1
μA
100
630
60
-0.7
V
-1.2
V
100
MHz
12
pF
CLASSIFICATION OF h_FE
Rank
Range
5E
100-250
5F
160-400
5G
250-630
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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