BC807 Datasheet, PDF (1/2 Pages) NXP Semiconductors – PNP general purpose transistor

Plastic-Encapsulate Transistors
FEATURES
Ldeally suited for automatic insertion
epitaxial planar die construction
complementary NPN type available(BC817)
BC807-16 ^(PNP)
BC807-25 ^(PNP)
BC807-40 ^(PNP)
Marking
BC807-16 BC807-25 BC807-40
5A
5B
5C
MAXIMUM RATINGS (TA=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
V_CBO
-50
V_CEO
-45
V_EBO
-5
I_C
-500
PC
300
T_J
150
Tstg
-55 to +150
Unit
V
V
V
mA
mW
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
807-16
807-25
807-40
Collector-emitter saturation voltage
VCBO IC= -10μA, IE=0
-50
VCEO IC= -10mA, IB=0
-45
VEBO IE= -1μA, IC=0
-5
ICBO VCB= -45V, IE=0
ICEO
IEBO
VCE= -40V, IB=0
VEB= -4 V, IC=0
100
hFE(1) VCE= -1V, IC= -100mA
160
250
VCE(sat) IC=-500mA, IB= -50mA
Base-emitter saturation voltage
Transition frequency
VBE(sat) IC= -500mA, IB= -50mA
fT
VCE= -5V, IC= -10mA
100
f=100MHz
Max
-0.1
-0.2
-0.1
250
400
600
-0.7
-1.2
Unit
V
V
V
uA
uA
uA
V
V
MHz
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