BAW56W Datasheet, PDF (1/1 Pages) NXP Semiconductors – High-speed double diode

Plastic-Encapsulate Diodes
SWITCHING DIODE
BAW56W
FEATURES
Fast Switching Speed
For General Purpose Switching Applications
High Conductance
1
Maximum Ratings @Ta=25℃
Parameter
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Average Rectified Output Current
Peak Forward Surge Current @t=1.0μs
@t =1.0s
Power Dissipation
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
V_RM
V_RRM
V_RWM
V_R
V_R(RMS)
I_FM
I_O
I_FSM
Pd
R_θJA
T_j
T_STG
Electrical Ratings @Ta=25℃
Parameter
Reverse breakdown voltage
Forward voltage
Reverse current
Capacitance between terminals
Symbol
V _(BR)
V_F1
V_F2
V_F3
V_F4
I_R1
I_R2
C_T
Min
75
Reverse recovery time
t_rr
Limit
100
75
53
300
150
2.0
1.0
200
625
150
-55~+150
Typ
Max
0.715
0.855
1.0
1.25
2.5
25
2
4
2
Unit
V
V
V
V
V
μA
nA
pF
ns
3
SOT-323
Unit
V
V
V
mA
mA
A
mW
℃/W
℃
℃
Conditions
I_R=2.5μA
I_F=1mA
I_F=10mA
I_F=50mA
I_F=150mA
V_R=75V
V_R=20V
V_R=0V,f=1MHz
I_F=I_R=10mA
Irr=0.1XI_R,R_L=100Ω
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