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| BAV99W Datasheet, PDF (1/1 Pages) NXP Semiconductors – High-speed double diode | |||
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SWITCHING DIODE
FEATURES
For high-speed switching applications
Connected in series
Plastic-Encapsulate Diodes
BAV99W
1
3
2
SOT-323
Maximum Ratings @Ta=25â
Parameter
Symbol
Limit
Unit
Reverse voltage
VR
75
V
Forward current
IO
150
mA
Forward power dissipation
PD
200
mW
Junction temperature
Tj
Storage temperature
Tstg
150
â
-55~+150
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reveres recovery time
Symbol
Test conditions
V(BR)
IR
VF
CD
trr
IR= 100µA
VR=75V
VR=20V
IF=1mA
IF=10mA
IF=50mA
IF=150mA
VR=0V f=1MHz
IF=IR=10mA
Irr=0.1ÃIR
RL=100â¦
Min
Max
Unit
75
V
2.5
µA
25
nA
715
855
mV
1000
1250
2
pF
4
ns
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
Page:P1 -P1
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