BAS40 Datasheet, PDF (1/2 Pages) NXP Semiconductors – Schottky barrier double diodes

SCHOTTKY DIODE
FEATURES
• Low Forward Voltage
• Fast Switching
MARKING
Plastic-Encapsulate Diodes
BAS40/-04/-05/-06
BAS40: B1
BAS40-06: L2
BAS40-05: 45
BAS40-04: CB
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Parameter
Symbol
Limits
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC Blocking Voltage
Forward continuous Current
Power Dissipation
Thermal Resistance. Junction to Ambient Air
Junction temperature
Storage temperature range
VRRM
VRWM
VR
IFM
PD
RθJA
TJ
TSTG
40
200
200
625
125
-65-125
Electrical Ratings @TA=25
Parameter
Symbol
Test conditions
Min
Reverse breakdown voltage
V(BR)
IR= 10μA
40
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reverse Recovery time
IR
VR=30V
VF
IF=1mA
IF=40mA
CD
VR=0,f=1MHz
t rr
Irr=1mA, IR=IF=10mA
RL=100Ω
SOT- 23
Unit
V
mA
mW
/W
Max
200
380
1000
5
5
Unit
V
nA
mV
pF
nS
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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