B772 Datasheet, PDF (1/2 Pages) Diode Semiconductor Korea – PNP Silicon Epitaxial Planar Transistor

Plastic-Encapsulate Transistors
FEATURES
Power dissipation
Marking : 772
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Storage Temperature
V_CBO
-40
V
V_CEO
-30
V
V_EBO
-5
V
I_C
3000
mA
P_C
500
mW
Tstg
-55-150
B772(PNP)
1. BASE
2. COLLECTO
3. EMITTER
SOT-89
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCBO
VCEO
VEBO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
IC=-100μA ,IE=0
IC= -10mA , IB=0
IE= -100μA,IC=0
VCB= -40V, IE=0
VCE=-30V, IB=0
VEB=-6V, IC=0
VCE= -2V, IC= -1A
IC=-2A, IB= -0.2A
IC=-2A, IB= -0.2A
VCE= -5V, IC=-0.1A
f =10MHz
-40
-30
-5
60
80
Max Unit
V
V
V
-1
μA
-10
μA
-1
μA
400
-0.5
V
-1.5
V
MHz
CLASSIFICATION OF HFE
Rank
R
Range
60-120
O
100-200
Y
160-320
GR
200-400
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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