A94 Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR（ PNP ）

Plastic-Encapsulate Transistors
FEATURES
High voltage
A94 ^(PNP)
MARKING:A94
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
V_CBO
-400
V
V_CEO
-400
V
V_EBO
-5
V
I_C
-200
mA
P_C
625
mW
T_J
150
Tstg
-55-150
1. EMITTER
2. BASE
3. COLLECTO
TO-92
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter sataration voltage
Transition frequency
Symbol
Test conditions
VCBO
VCEO
VEBO
ICBO
ICEO
IEBO
hFE (1)
hFE(2)
hFE(3)
VCE(sat)
VCE(sat)
VBE(sat)
fT
IC= -100μA , IE=0
IC= -1mA , IB=0
IE=-100μA, IC=0
VCB=-400 V, IE=0
VCE=-400 V
VEB= -4V, IC=0
VCE=-10V , IC=-10mA
VCE=-10V, IC=-1mA
VCE=-10V, IC=-100mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB= -1mA
VCE=-20V, IC=-10mA ,f
=30MHz
Min
-400
-400
-5
80
70
60
50
Typ Max
-0.1
-5
-0.1
300
Unit
V
V
V
uA
uA
uA
-0.2
-0.3
-0.75
V
V
V
MHz
CLASSIFICATION OF HFE
Rank
A
Range
80-100
B1
100-150
B2
150-200
C
200-250
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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