A92 Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR（ PNP ）

Plastic-Encapsulate Transistors
FEATURES
Collector-Emitter voltage:VCEO=300V
Collector current up to 500mA.
Complement to A42
Small flat package.
Power dissipation:Pd(max)=500mW.
Marking: A92
Maximum Ratings (Ta=25 unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-300
V
Collector-Emitter Voltage
VCEO
-300
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current -Continuous
IC
-500
mA
Collector Power dissipation
Storage Temperature
PC
0.5
W
Tstg
-55to +150
ELECTRICAL CHARACTERISTICS ( @ Ta=25 unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
rrent gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
VCBO
VCEO
VEBO
ICBO
IEBO
HFE(1)
HFE(2)
HFE(3)
VCE(sat)
VBE(sat)
fT
Test conditions
Ic= -100µA, IE=0
Ic= -1mA, IB=0
IE= -100µA, IC=0
VCB=-200V, IE=0
VEB= -5V, IC=0
VCE= -10V, IC= -1mA
VCE= -10V, IC=-10mA
VCE= -10V, IC=-30mA
IC=-20 mA, IB= -2mA
IC= -20 mA, IB= -2mA
VCE=-20V, IC= -10mA
f=30MHz
A92 (PNP)
1. BASE
2. COLLECTO
3. EMITTER
SOT-89
Min
Max
Unit
-300
V
-300
V
-5
V
-0.25
µA
-0.1
µA
60
100
300
60
-0.2
V
-0.9
V
50
MHz
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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