A44 Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR（ NPN ）

Plastic-Encapsulate Transistors
FEATURES
High voltage
MARKING:A44
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
V_CBO
400
V
V_CEO
400
V
V_EBO
5
V
I_C
200
mA
P_C
625
mW
T_J
150
Tstg
-55-150
A44 (NPN)
1. EMITTER
2. BASE
3. COLLECTO
TO-92
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter sataration voltage
Transition frequency
Symbol
Test conditions
Min
VCBO
VCEO
VEBO
ICBO
ICEO
IEBO
hFE (1)
hFE(2)
hFE(3)
hFE(4)
VCE(sat)
VCE(sat)
VBE(sat)
fT
IC= 100μA , IE=0
IC= 1mA , IB=0
IE=100μA, IC=0
VCB=400 V, IE=0
VCE=400 V
VEB= 4V, IC=0
VCE=10V , IC=10mA
VCE=10V, IC=1mA
VCE=10V, IC=100mA
VCE=10V, IC=50mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB= 1mA
VCE=20V, IC=10mA ,f =30MHz
400
400
5
80
70
40
80
50
Typ Max
0.1
5
0.1
300
Unit
V
V
V
μA
AμA
A^μA
A
0.2
V
0.3
V
0.75
V
MHz
CLASSIFICATION OF HFE
Rank
A
Range
80-10
0
B
1
100-15
0
B
2
150-20
0
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
C
200-30
0
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