A42 Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR（ NPN ）

Plastic-Encapsulate Transistors
FEATURES
High voltage
A42 (NPN)
MARKING:A42
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
V_CBO
300
V
V_CEO
300
V
V_EBO
5
V
I_C
500
mA
P_C
625
mW
T_J
150
Tstg
-55-150
Thermal Resistance, junction to Ambient
R_Ó¨JA
200
Thermal Resistance, unction to Case
R_Ó¨JC
83.3
/mW
/mW
1. EMITTER
2. BASE
3. COLLECTO
TO-92
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=100uA, IE=0
300
V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0
300
V
Emitter-base breakdown voltage
V(BR)EBO IE=100μA, IC=0
5
V
Collector cut-off current
ICBO
VCB=200V, IE=0
0.25
μA
Emitter cut-off current
IEBO
VEB=5V, IC=0
0.1
μA
DC current gain
hFE(1)
hFE(2)
VCE=10V, IC=1mA
VCE=10V, IC=10mA
60
80
250
hFE(3) VCE=10V, IC=30mA
75
Collector-emitter saturation voltage VCE(sat) IC=20mA, IB=2mA
0.2
V
Base-emitter saturation voltage
VBE(sat) IC=20mA, IB=2mA
0.9
V
Transition frequency
fT
VCE=20V, IC=10mA,f=30MHZ
50
MHz
CLASSIFICATION OF HFE
Rank
A
Range
80-100
B1
100-150
B2
150-200
C
200-250
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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