A1015 Datasheet, PDF (1/2 Pages) Weitron Technology – PNP General Purpose Transistors

Plastic-Encapsulate Transistors
FEATURES
Power dissipation
MARKING:A1015
A1015 (PNP)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
V_CBO
-50
V
V_CEO
-50
V
V_EBO
-5
V
I_C
-150
mA
P_C
400
mW
T_J
150
Tstg
-55-150
1. EMITTER
2. COLLECTO
3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Min Pyp Max Unit
Collector-base breakdown voltage
V(BR)CBO IC= -100μA, IE=0
-50
Collector-emitter breakdown voltage
V(BR)CEO IC= -0. 1mA, IB=0
-50
Emitter-base breakdown voltage
V(BR)EBO IE= -100μA, IC=0
-5
Collector cut-off current
ICBO VCB= -50V,IE=0
Collector cut-off current
ICEO VCE= -50V, IB=0
Emitter cut-off current
IEBO VEB= -5V, IC=0
DC current gain
hFE
VCE= -6V, IC= -2mA
70
Collector-emitter saturation voltage
VCE(sat) IC= -100mA, IB= -10mA
Base-emitter saturation voltage
VBE(sat) IC= -100mA, IB= -10mA
Transition frequency
fT
VCE= -10 V, IC= -1Ma,F =30MHz
80
Collector Output Capacitance
Cob VCB=-10V,IE=0,f=1MHZ
Noise Figure
NF
VCE= -6 V, IC= -0.1mA, f
=1KHz,RG=10K
V
V
V
-0.1 μA
-0.1 μA
-0.1 μA
400
-0.3
V
-1.1
V
MHz
7
pF
6
dB
CLASSIFICATION OF HFE
Rank
Range
O
70-140
Y
120-240
GR
200-400
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