8810 Datasheet, PDF (1/4 Pages) GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. – Dual N-Channel Enhancement Mode MOSFET

Dual N-Channel Enhancement Mode MOSFET
FEATURES
V_DS (V) = 20V
I_D = 6A (V _GS = 4.5V)
R_DS(ON) < 22mΩ (V_GS = 4.5V)
R_DS(ON) < 30mΩ (V_GS = 2.5V)
ESD Rating: 2000V HBM
Plastic-Encapsulate Mosfets
8810
N -Channel MOSFET
D1/D2
S1
S1
G1
TSSOP-8
Top View
1
8
2
7
3
6
4
5
D1/D2
S2
S2
G2
D1
D2
G2
S1
S2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V_DS
V_GS
Continuous Drain
Current ^A
T_A=25°C
I_D
Pulsed Drain Current ^B
I_DM
Maximum
20
±8
6
30
Power Dissipation ^A T_A=25°C
P_D
1.5
Junction and Storage Temperature Range T_J, T_STG
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Lead ^C
Symbol
Typ
t ≤ 10s
Steady-State
R_θJA
64
89
Steady-State
R_θJL
53
Max
83
120
70
TSSOP-8
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
GUANGDONG HOTTECH INDUSTRIAL CO., LTD.
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